Device Benchmark Comparisons via
Kinetic, Hydrodynamic, and High-Field models
By: Carlo Cercignani, Irene Gamba, Joseph W. Jerome and Chi-Wang Shu
This paper describes benchmark comparisons
for a GaAs n+/n/n+ diode.
A global kinetic model is simulated, and compared with various realizations
of the hydrodynamic model, depending on mobility calibration.
Finally, the channel region alone is simulated, with interior boundary
conditions derived from the kinetic model, by use of the high-field
(augmented drift-diffusion) model.
This paper appeared in: Computer Methods in Applied Mechanics and
Engineering, 181 (2000), pp. 381--392. It can be viewed in the following