Device Benchmark Comparisons via Kinetic, Hydrodynamic, and High-Field models

By: Carlo Cercignani, Irene Gamba, Joseph W. Jerome and Chi-Wang Shu

This paper describes benchmark comparisons for a GaAs n+/n/n+ diode. A global kinetic model is simulated, and compared with various realizations of the hydrodynamic model, depending on mobility calibration. Finally, the channel region alone is simulated, with interior boundary conditions derived from the kinetic model, by use of the high-field (augmented drift-diffusion) model.
This paper appeared in: Computer Methods in Applied Mechanics and Engineering, 181 (2000), pp. 381--392. It can be viewed in the following format: