A Domain Decomposition Method: A Simulation Study
By: Carlo Cercignani, Irene Gamba, Joseph W. Jerome and Chi-Wang Shu
A mesoscopic/macroscopic high-field model was derived by Cercignani,
Gamba, and Levermore in . The model was summarized in relationship to
semiconductors in .
In , a conceptual domain decomposition method was
introduced, based upon use of the drift-diffusion model in highly-doped
regions of the device, and use of the high-field model in the channel,
which represents a (relatively) lightly-doped region. The hydrodynamic
was used to calibrate interior boundary conditions.
This paper extends the approach of .
(1) Benchmark comparisons are described
for a GaAs $n^+-n-n^+$ diode, via a
global kinetic model.
(2) An elementary global domain decomposition method is presented, wherein
the optimal points of separation between drift-diffusion and the high field
are chosen by systematic sampling.
The interdomain boundary conditions are implemented through the stencil
overlap of the algorithms in both regions.
This paper appeared in the Proceedings
of the 1998 Sixth International
Workshop on Computational Electronics, Osaka
University Press, 1998, pp. 174--177, and can
be viewed in the following format: