The Utility of Modeling and Simulation in Determining
Transport Performance Properties of Semiconductors
By: Bernardo Cockburn, Joseph W. Jerome, and Chi-Wang Shu
The RKDG method has been effectively used in modeling and simulating
semiconductor devices, where the underlying models are hydrodynamic in
nature. These include classical as well as quantum models. In this paper,
we survey and interpret some of these results.
For classical transport,
we review the simulation of
a benchmark MESFET transistor by means of
discontinuous Galerkin methods of degree one.
For quantum transport, we report the success in simulation
of the resonant tunneling diode. The principal features here are negative
differential resistance and hysteresis.
This paper appears in
Discontinuous Galerkin Methods: Theory, Computation, and
Applications (B. Cockburn, G. Karniadakis, and C.-W. Shu, editors),
Lecture Notes in Computational Science and Engineering, vol. 11,
Springer-Verlag, Heidelberg (2000), pages 147--156.
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