Energy Transport Systems for Semiconductors: Analysis and Simulation
By: Joseph W. Jerome and Chi-Wang Shu
Moment models of carrier transport, derived from the
Boltzmann equation, have made possible the simulation of certain key
through such realistic global assumptions as energy dependent mobility
Some of these effects are not discerned via classical drift-diffusion
models, which are primarily local in nature.
In this paper, analysis and simulation of an energy
model, the ET model, will be presented. This model, intermediate between
hydrodynamic and drift-diffusion models, was developed at the University
The algorithms employed are the essentially
non-oscillatory shock capturing algorithms.
Mathematical results will be presented as well, for the one
dimensional steady state model. Informative comparisons with the
hydrodynamic model will be presented. One carrier transport is studied.
This paper appeared in
Proceedings of the First
Congress of Nonlinear Analysts (V. Lakshmikantham, editor), Walter de
Gruyter Publishing, Berlin (1996), 3835--3846.
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